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BFP196WH6327XTSA1
Bipolar - RF Transistor, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 hFE
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBFP196WH6327XTSA1
Newark Part No.50Y1749
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max12V
Collector Emitter Voltage V(br)ceo12V
Transition Frequency7.5GHz
Power Dissipation700mW
Power Dissipation Pd700mW
Continuous Collector Current150mA
DC Collector Current150mA
DC Current Gain hFE70hFE
Transistor Case StyleSOT-343
No. of Pins4Pins
RF Transistor CaseSOT-343
DC Current Gain hFE Min70hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
NPN silicon RF transistor for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA.
- Power amplifier for DECT and PCN systems
- fT = 7.5GHz, F = 1.3dB at 900MHz
- Qualified according AEC Q101
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Power Dissipation
700mW
Continuous Collector Current
150mA
DC Current Gain hFE
70hFE
No. of Pins
4Pins
DC Current Gain hFE Min
70hFE
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
12V
Transition Frequency
7.5GHz
Power Dissipation Pd
700mW
DC Collector Current
150mA
Transistor Case Style
SOT-343
RF Transistor Case
SOT-343
Transistor Mounting
Surface Mount
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate