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BSC009NE2LSATMA1
Power MOSFET, N Channel, 25 V, 100 A, 900 µohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC009NE2LSATMA1
Newark Part No.50Y1791
Also Known AsBSC009NE2LS, SP000893362
Technical Datasheet
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.120 |
| 10+ | $1.330 |
| 25+ | $1.220 |
| 50+ | $1.110 |
| 100+ | $0.992 |
| 250+ | $0.889 |
| 500+ | $0.785 |
| 1000+ | $0.703 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.12
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC009NE2LSATMA1
Newark Part No.50Y1791
Also Known AsBSC009NE2LS, SP000893362
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
On Resistance Rds(on)750µohm
Drain Source On State Resistance900µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd96W
Gate Source Threshold Voltage Max2.2V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSC009NE2LS is a N-channel Power MOSFET features high DC and pulsed current capability. With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency. Lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, O-ring, e-fuse and HOT-SWAP application. The package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.
- Lowest ON-state resistance
- High DC and pulsed current capability
- Easy to design-in
- Increased battery lifetime/system efficiency
- Saving space (reducing the number of devices needed)
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
750µohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
900µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
96W
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate