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BSC011N03LSATMA1
MOSFET, N-CH, 30V, 230A, TDSON
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.620 |
| 10+ | $1.200 |
| 25+ | $1.100 |
| 50+ | $0.992 |
| 100+ | $0.891 |
| 250+ | $0.827 |
| 500+ | $0.764 |
| 1000+ | $0.723 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.62
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC011N03LSATMA1
Newark Part No.47Y7992
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id230A
On Resistance Rds(on)900µohm
Drain Source On State Resistance1100µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd96W
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- OptiMOS™ power-MOSFET
- Optimized for high performance buck converter
- Very low on-resistance RDS(on) at VGS = 4.5V
- 100% avalanche tested
- Superior thermal resistance
- N-channel MOSFET
- Qualified according to JEDEC for target applications
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
900µohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
96W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
230A
Drain Source On State Resistance
1100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate