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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC027N04LSGATMA1
Newark Part No.97Y1247
Product RangeOptiMOS 3
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance2700µohm
On Resistance Rds(on)0.0023ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd83W
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 3
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- Optima's ™ 3 power transistor
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on),Superior thermal resistance
- 100% avalanche tested
- Superior thermal resistance
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2700µohm
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
83W
No. of Pins
8Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BSC027N04LSGATMA1
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate