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FF08MR12W1MA1B11ABPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 150 A, 1.2 kV, 0.00733 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoFF08MR12W1MA1B11ABPSA1
Newark Part No.78AH7167
Product RangeCoolSiC Easy 1B Series
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF08MR12W1MA1B11ABPSA1
Newark Part No.78AH7167
Product RangeCoolSiC Easy 1B Series
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id150A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.00733ohm
Drain Source On State Resistance0.00733ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.4V
Power Dissipation20mW
Power Dissipation Pd-
Operating Temperature Max150°C
Product RangeCoolSiC Easy 1B Series
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.00733ohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.4V
Power Dissipation Pd
-
Product Range
CoolSiC Easy 1B Series
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
150A
On Resistance Rds(on)
0.00733ohm
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
20mW
Operating Temperature Max
150°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate