FM25C160B-GTR

FM25C160B-GTR is a 16-Kbit (2 K × 8) Serial (SPI) automotive F-RAM. It is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the FM25C160B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories.

• 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8
• High-endurance 10 trillion read/writes, 121-year data retention
• No Delay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0,0) and mode 3 (1,1)
• Hardware protection using the Write Protect (active low WP) pin
• S/W protection using write disable instruction, S/W block protection for 1/4, 1/2 or entire array
• VDD standby current is 10µA max (TA=85°C)
• Voltage operation range from 4.5V to 5.5V
• 8-pin SOIC package, industrial operating temperature range from -40 to +125°C