FM25L16B-DG

FM25L16B-DG is a FM25L16B 16Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. It is ideal for nonvolatile memory applications requiring frequent or rapid writes.

• 16Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 20MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect active-low WP pin
• Software protection using write disable instruction
• Low power consumption, 200μA active current at 1MHz, 3μA (typ) standby current
• Low-voltage operation: VDD = 2.7V to 3.6V
• Industrial temperature range from –40°C to +85°C
• 8-pin DFN package