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Available to Order
Manufacturer Standard Lead Time: 56 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1,174.880 |
Price for:Each
Minimum: 1
Multiple: 1
$1,174.88
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFZ825R33HE4DBPSA1
Newark Part No.52AJ5107
Product RangeIHM-B
Technical Datasheet
IGBT ConfigurationDual, Common Emitter
Continuous Collector Current825A
DC Collector Current825A
Collector Emitter Saturation Voltage2.4V
Collector Emitter Saturation Voltage Vce(on)2.4V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max3.3kV
Collector Emitter Voltage V(br)ceo3.3kV
IGBT TechnologyIGBT 4 [Trench/Field Stop]
Transistor MountingPanel
Product RangeIHM-B
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
IGBT Configuration
Dual, Common Emitter
DC Collector Current
825A
Collector Emitter Saturation Voltage Vce(on)
2.4V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage V(br)ceo
3.3kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
Continuous Collector Current
825A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
3.3kV
IGBT Technology
IGBT 4 [Trench/Field Stop]
Product Range
IHM-B
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability