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GS66508TMRXUSA1
Gallium Nitride (GaN) Transistor, 650 V, 30 A, 0.063 ohm, 6.1 nC, GaNPX, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $21.430 |
| 10+ | $19.700 |
| 25+ | $18.210 |
| 50+ | $16.740 |
| 100+ | $15.270 |
| 250+ | $14.250 |
| 500+ | $13.390 |
| 1000+ | $12.710 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$21.43
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Product Information
ManufacturerINFINEON
Manufacturer Part NoGS66508TMRXUSA1
Newark Part No.42AM5364
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id30A
Drain Source On State Resistance0.063ohm
Typical Gate Charge6.1nC
Transistor Case StyleGaNPX
Transistor MountingSurface Mount
No. of Pins4Pins
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.063ohm
Transistor Case Style
GaNPX
No. of Pins
4Pins
Qualification
-
Continuous Drain Current Id
30A
Typical Gate Charge
6.1nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate