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IMBG120R030M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG120R030M1HXTMA1
Newark Part No.92AH5307
Product RangeCoolSiC Series
Technical Datasheet
1,059 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $16.300 |
| 10+ | $11.600 |
| 25+ | $10.980 |
| 50+ | $10.370 |
| 100+ | $9.750 |
| 250+ | $9.700 |
| 500+ | $9.660 |
| 1000+ | $8.610 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$16.30
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R030M1HXTMA1
Newark Part No.92AH5307
Product RangeCoolSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id56A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.041ohm
On Resistance Rds(on)0.03ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.7V
Power Dissipation300W
Power Dissipation Pd300W
Operating Temperature Max175°C
Product RangeCoolSiC Series
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.03ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.7V
Power Dissipation Pd
300W
Product Range
CoolSiC Series
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
300W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate