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IMBG65R057M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 39 A, 650 V, 0.057 ohm, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG65R057M1HXTMA1
Newark Part No.26AK5708
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
200 In Stock
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| 1+ | $5.470 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R057M1HXTMA1
Newark Part No.26AK5708
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id39A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.057ohm
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation161W
Power Dissipation Pd161W
Operating Temperature Max175°C
Product RangeCoolSiC M1 Trench Series
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.057ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
161W
Product Range
CoolSiC M1 Trench Series
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
39A
On Resistance Rds(on)
0.057ohm
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation
161W
Operating Temperature Max
175°C
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate