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IPB038N12N3GATMA1
Power MOSFET, N Channel, 120 V, 120 A, 0.0032 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB038N12N3GATMA1
Newark Part No.47W3464
Also Known AsIPB038N12N3 G, SP000694160
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.530 |
| 10+ | $2.520 |
| 25+ | $2.320 |
| 50+ | $2.140 |
| 100+ | $1.950 |
| 250+ | $1.930 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$3.53
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB038N12N3GATMA1
Newark Part No.47W3464
Also Known AsIPB038N12N3 G, SP000694160
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id120A
On Resistance Rds(on)0.0032ohm
Drain Source On State Resistance0.0032ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd300W
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance R DS(on)
- Excellent gate charge x RDS (NO) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- N-channel, normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
120V
On Resistance Rds(on)
0.0032ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.0032ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300W
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for IPB038N12N3GATMA1
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability