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IPB108N15N3GATMA1
Power MOSFET, N Channel, 150 V, 83 A, 0.0108 ohm, TO-263 (D2PAK), Surface Mount
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105 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.930 |
| 10+ | $2.570 |
| 25+ | $2.370 |
| 50+ | $2.170 |
| 100+ | $1.970 |
| 250+ | $1.890 |
| 500+ | $1.820 |
| 1000+ | $1.510 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$3.93
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB108N15N3GATMA1
Newark Part No.85X6017
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id83A
On Resistance Rds(on)0.0091ohm
Drain Source On State Resistance0.0108ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd214W
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
- OptiMOS™ 3 power-transistor
- N-channel, normal level
- Excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.0091ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
214W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
83A
Drain Source On State Resistance
0.0108ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate