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IPB65R660CFDAATMA1
MOSFET, N-CH, 650V, 6A, TO-263 ROHS COMPLIANT: YES
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ManufacturerINFINEON
Manufacturer Part NoIPB65R660CFDAATMA1
Newark Part No.80AH9596
Product RangeCoolMOS CFDA
Technical Datasheet
955 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.230 |
| 10+ | $1.430 |
| 25+ | $1.350 |
| 50+ | $1.270 |
| 100+ | $1.190 |
| 250+ | $1.070 |
| 500+ | $0.940 |
| 1000+ | $0.853 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.23
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB65R660CFDAATMA1
Newark Part No.80AH9596
Product RangeCoolMOS CFDA
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id6A
On Resistance Rds(on)0.594ohm
Drain Source On State Resistance0.594ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation62.5W
Power Dissipation Pd62.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFDA
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.594ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
No. of Pins
3Pins
Product Range
CoolMOS CFDA
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.594ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
62.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability