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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD30N03S4L14ATMA1
Newark Part No.50Y2031
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
On Resistance Rds(on)0.0112ohm
Drain Source On State Resistance0.0136ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd31W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation31W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Product Overview
The IPD30N03S4L-14 is a N-channel enhancement-mode MOSFET with low switching and conduction power losses for highest thermal efficiency.
- AEC-Q101 qualified
- MSL1 up to 260°C peak reflow
- Green device
- 100% Avalanche tested
- Optimized total gate charge enables smaller driver output stages
- Ultra low RDS (ON)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0112ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
31W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.0136ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
31W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability