Print Page
IPD35N10S3L26ATMA1
Power MOSFET, N Channel, 100 V, 35 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD35N10S3L26ATMA1
Newark Part No.50Y2034
Product RangeOptiMOS T Series
Technical Datasheet
235 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.788 |
| 10+ | $0.788 |
| 25+ | $0.788 |
| 50+ | $0.788 |
| 100+ | $0.788 |
| 250+ | $0.732 |
| 500+ | $0.732 |
| 1000+ | $0.732 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.79
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD35N10S3L26ATMA1
Newark Part No.50Y2034
Product RangeOptiMOS T Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id35A
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd71W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPD35N10S3L26ATMA1
2 Products Found
Product Overview
The IPD35N10S3L-26 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
- AEC-Q101 qualified
- MSL1 up to 260°C peak reflow
- Green device
- 100% Avalanche tested
- Robust packages with superior quality and reliability
- Optimized total gate charge enables smaller driver output stages
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.02ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
71W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
OptiMOS T Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate