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IPD60R1K4C6ATMA1
MOSFET, N-CH, 600V, 3.2A, TO-252-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD60R1K4C6ATMA1
Newark Part No.13AC9044
Product RangeCoolMOS C6
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.060 |
| 10+ | $0.743 |
| 25+ | $0.673 |
| 50+ | $0.612 |
| 100+ | $0.549 |
| 250+ | $0.544 |
| 500+ | $0.455 |
| 1000+ | $0.395 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD60R1K4C6ATMA1
Newark Part No.13AC9044
Product RangeCoolMOS C6
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id3.2A
On Resistance Rds(on)1.26ohm
Drain Source On State Resistance1.26ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation28.4W
Power Dissipation Pd28.4W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C6
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.26ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
28.4W
No. of Pins
3Pins
Product Range
CoolMOS C6
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
3.2A
Drain Source On State Resistance
1.26ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
28.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability