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IPD60R2K0C6ATMA1
MOSFET, N-CH, 600V, 2.4A, TO-252
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD60R2K0C6ATMA1
Newark Part No.49AC0294
Product RangeCoolMOS C6
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.010 |
| 10+ | $0.736 |
| 25+ | $0.660 |
| 50+ | $0.583 |
| 100+ | $0.508 |
| 250+ | $0.464 |
| 500+ | $0.418 |
| 1000+ | $0.381 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.01
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD60R2K0C6ATMA1
Newark Part No.49AC0294
Product RangeCoolMOS C6
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id2.4A
Drain Source On State Resistance1.8ohm
On Resistance Rds(on)1.8ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd22.3W
Gate Source Threshold Voltage Max3V
Power Dissipation22.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C6
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
1.8ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS C6
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
2.4A
On Resistance Rds(on)
1.8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
22.3W
Power Dissipation
22.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IPD60R2K0C6ATMA1
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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