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IPD65R660CFDBTMA1
MOSFET, N-CH, 650V, 6A, TO-252-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD65R660CFDBTMA1
Newark Part No.13AC9050
Product RangeCoolMOS CFD2
Technical Datasheet
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 33 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.860 |
| 10+ | $1.610 |
| 25+ | $1.460 |
| 50+ | $1.340 |
| 100+ | $1.140 |
| 250+ | $1.010 |
| 500+ | $0.889 |
| 1000+ | $0.856 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.86
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD65R660CFDBTMA1
Newark Part No.13AC9050
Product RangeCoolMOS CFD2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id6A
On Resistance Rds(on)0.594ohm
Drain Source On State Resistance0.594ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd-
Power Dissipation-
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFD2
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.594ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
-
No. of Pins
3Pins
Product Range
CoolMOS CFD2
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.594ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IPD65R660CFDBTMA1
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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