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IPP055N08NF2SAKMA1
MOSFET, N-CH, 80V, 99A, TO-220 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP055N08NF2SAKMA1
Newark Part No.36AJ3712
Product RangeStrongIRFET 2
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.690 |
| 10+ | $1.940 |
| 100+ | $1.190 |
| 500+ | $0.951 |
| 1000+ | $0.870 |
| 3000+ | $0.813 |
| 5000+ | $0.798 |
Price for:Each
Minimum: 1
Multiple: 1
$2.69
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP055N08NF2SAKMA1
Newark Part No.36AJ3712
Product RangeStrongIRFET 2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id99A
On Resistance Rds(on)0.0048ohm
Drain Source On State Resistance4800µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd107W
Power Dissipation107W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET 2
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0048ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
107W
No. of Pins
3Pins
Product Range
StrongIRFET 2
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
99A
Drain Source On State Resistance
4800µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation
107W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability