Print Page
IPT020N10N3ATMA1
MOSFET, N-CH, 100V, 300A, HSOF
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
3,990 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $5.190 |
| 10+ | $3.660 |
| 25+ | $3.300 |
| 50+ | $2.960 |
| 100+ | $2.600 |
| 250+ | $2.550 |
| 500+ | $2.480 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.19
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPT020N10N3ATMA1
Newark Part No.50Y2079
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id300A
Drain Source On State Resistance2000µohm
On Resistance Rds(on)0.0017ohm
Transistor Case StyleHSOF
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd375W
Gate Source Threshold Voltage Max2.7V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPT020N10N3ATMA1
2 Products Found
Product Overview
The IPT020N10N3 is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
- Industry‘s lowest R DS(on)
- Highest current capability up to 300A
- Very low package parasitic and inductances
- Less paralleling and cooling required
- Highest system reliability
- Enabling very compact design
- Normal level
- Excellent gate charge x RDS (ON) product (FOM)
- Extremely low ON-resistance RDS (ON)
- High current capability
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
2000µohm
Transistor Case Style
HSOF
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
300A
On Resistance Rds(on)
0.0017ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
375W
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate