Quantity | Price |
---|---|
1+ | $9.370 |
10+ | $8.460 |
25+ | $8.070 |
50+ | $7.540 |
100+ | $7.010 |
250+ | $6.690 |
500+ | $6.110 |
Product Information
Product Overview
The IR2213PBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 1200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Power Management
Technical Specifications
2Channels
High Side and Low Side
14Pins
DIP
Through Hole
2.5A
20V
125°C
225ns
-
No SVHC (23-Jan-2024)
-
IGBT, MOSFET
DIP
Non-Inverting
2A
12V
-40°C
280ns
-
-
Associated Products
3 Products Found
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate