Print Page
IRF540NPBF
Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF540NPBF
Newark Part No.63J7319
Product RangeHEXFET Series
Also Known AsSP001561906
Technical Datasheet
10,788 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.583 |
| 10+ | $0.580 |
| 100+ | $0.531 |
| 500+ | $0.490 |
| 1000+ | $0.490 |
| 4000+ | $0.490 |
| 10000+ | $0.490 |
Price for:Each
Minimum: 1
Multiple: 1
$0.58
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF540NPBF
Newark Part No.63J7319
Product RangeHEXFET Series
Also Known AsSP001561906
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id33A
Drain Source On State Resistance0.044ohm
On Resistance Rds(on)0.044ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd130mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation130W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF540NPBF is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.044ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
130mW
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
33A
On Resistance Rds(on)
0.044ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
130W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for IRF540NPBF
1 Product Found
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate