Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7341GTRPBF
Newark Part No.49AC0327
Product RangeHEXFET Series
Technical Datasheet
11 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $2.320 |
10+ | $1.500 |
25+ | $1.400 |
50+ | $1.300 |
100+ | $1.210 |
250+ | $1.100 |
500+ | $0.978 |
1000+ | $0.973 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.32
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7341GTRPBF
Newark Part No.49AC0327
Product RangeHEXFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds55V
Continuous Drain Current Id5.1A
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
55V
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance P Channel
0.043ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.7W
Product Range
HEXFET Series
MSL
-
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id
5.1A
Continuous Drain Current Id N Channel
5.1A
Drain Source On State Resistance N Channel
0.043ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.7W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IRF7341GTRPBF
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate