IRF7389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm
| Quantity | Price |
|---|---|
| 1+ | $1.540 |
| 10+ | $0.972 |
| 25+ | $0.865 |
| 50+ | $0.756 |
| 100+ | $0.649 |
| 250+ | $0.583 |
| 500+ | $0.516 |
| 1000+ | $0.470 |
Product Information
Product Overview
The IRF7389TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Surface-mount device
- Fully avalanche rated
Applications
Industrial, Power Management
Technical Specifications
Complementary N and P Channel
30V
30V
7.3A
0.023ohm
8Pins
2.5W
-
MSL 1 - Unlimited
7.3A
30V
7.3A
0.023ohm
SOIC
2.5W
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate