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IRF8010PBF
Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.740 |
| 10+ | $1.150 |
| 100+ | $1.070 |
| 500+ | $1.060 |
| 1000+ | $1.020 |
| 3000+ | $0.955 |
| 5000+ | $0.926 |
Price for:Each
Minimum: 1
Multiple: 1
$1.74
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF8010PBF
Newark Part No.38K2853
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
On Resistance Rds(on)0.015ohm
Drain Source On State Resistance0.015ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd260W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation260W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.015ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
260W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
260W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate