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IRFB4127PBF
Power MOSFET, N Channel, 200 V, 76 A, 0.017 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.840 |
| 10+ | $1.730 |
| 25+ | $1.590 |
| 50+ | $1.520 |
| 100+ | $1.430 |
| 250+ | $1.380 |
| 500+ | $1.370 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB4127PBF
Newark Part No.45P3441
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id76A
Drain Source On State Resistance0.017ohm
On Resistance Rds(on)0.017ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5V
Power Dissipation375W
Power Dissipation Pd375W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.017ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
20V
Power Dissipation
375W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
76A
On Resistance Rds(on)
0.017ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate