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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP4127PBF
Newark Part No.34AC1747
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id75A
On Resistance Rds(on)0.017ohm
Drain Source On State Resistance0.021ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd341W
Power Dissipation341W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® power MOSFET suitable for use in high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.017ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation Pd
341W
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
75A
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation
341W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate