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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR3504ZTRPBF
Newark Part No.13AC9132
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id42A
On Resistance Rds(on)0.00823ohm
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation90W
Power Dissipation Pd90W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel HEXFET® power MOSFET ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters and DC-DC converters.
- Advanced process technology
- Ultra low on-resistance
- Fast switching
- Repetitive avalanche allowed up to Tjmax
- Product qualification according to JEDEC standard
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.00823ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
90W
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
42A
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
90W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate