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Quantity | Price |
---|---|
1+ | $0.971 |
10+ | $0.969 |
100+ | $0.887 |
500+ | $0.887 |
1000+ | $0.887 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR4510TRPBF
Newark Part No.55W4111
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id56A
Drain Source On State Resistance0.0139ohm
On Resistance Rds(on)0.0111ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd143W
Power Dissipation143W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
100V Single N-Channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0139ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation Pd
143W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
On Resistance Rds(on)
0.0111ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
143W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate