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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL540NPBF
Newark Part No.63J7809
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id36A
Drain Source On State Resistance44mohm
On Resistance Rds(on)0.044ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd140W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Logic-level gate drive
- Advanced process technology
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
44mohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
140W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
On Resistance Rds(on)
0.044ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for IRL540NPBF
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate