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SPW32N50C3FKSA1
Power MOSFET, N Channel, 500 V, 32 A, 0.11 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPW32N50C3FKSA1
Newark Part No.98K0741
Also Known AsSPW32N50C3, SP000014625
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1+ | $11.120 |
| 10+ | $10.050 |
| 25+ | $9.470 |
| 50+ | $8.900 |
| 100+ | $8.320 |
| 480+ | $7.780 |
| 720+ | $7.240 |
Price for:Each
Minimum: 1
Multiple: 1
$11.12
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPW32N50C3FKSA1
Newark Part No.98K0741
Also Known AsSPW32N50C3, SP000014625
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id32A
On Resistance Rds(on)0.09ohm
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd284W
Gate Source Threshold Voltage Max3V
Power Dissipation284W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SPW32N50C3 is a CoolMOS™ N-channel Power MOSFET comes with a new revolutionary high voltage technology. It offers ultra-low gate charge and ultra-low effective capacitances. The 500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the “working horse" of the portfolio.
- Low specific ON-state resistance
- Very low energy storage in output capacitance (Eoss) @ 400V
- Low gate charge (Qg)
- Field proven CoolMOS™ quality
- High efficiency and power density
- High reliability
- Ease of use
- Periodic avalanche rated
- Extreme dV/dt rated
- Improved transconductance
- Qualified according to JEDEC for target applications
- Green device
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.09ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
32A
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
284W
Power Dissipation
284W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate