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IXFN55N50F
Bipolar (BJT) Single Transistor, N Channel, 55 A, 500 V, 85 mohm, 10 V, 5.5 V
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerIXYS RF
Manufacturer Part NoIXFN55N50F
Newark Part No.42M1930
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds500V
Drain Source On State Resistance85mohm
Power Dissipation Pd600W
Operating Frequency Min-
Rds(on) Test Voltage10V
Operating Frequency Max500kHz
Gate Source Threshold Voltage Max5.5V
Transistor Case StyleSOT-227B
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXFN55N50F is a N-channel Power MOSFET offers low package inductance hence easy to drive and to protect. It is designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation and laser driver applications.
- RF capable MOSFET
- Enhancement-mode
- Double metal process for low gate resistance
- Rugged polysilicon gate cell structure
- Unclamped inductive switching rated
- Easy to mount
- Space savings
- High power density
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Power Dissipation Pd
600W
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
600W
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
55A
Drain Source On State Resistance
85mohm
Operating Frequency Min
-
Operating Frequency Max
500kHz
Transistor Case Style
SOT-227B
Operating Temperature Max
150°C
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate