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IXFH42N60P3
Power MOSFET, N Channel, 600 V, 42 A, 0.185 ohm, TO-247, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH42N60P3
Newark Part No.68X2861
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $10.400 |
| 10+ | $8.500 |
| 25+ | $8.410 |
| 60+ | $8.330 |
| 120+ | $8.230 |
| 270+ | $8.140 |
Price for:Each
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Multiple: 1
$10.40
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH42N60P3
Newark Part No.68X2861
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id42A
On Resistance Rds(on)0.185ohm
Drain Source On State Resistance0.185ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd830W
Gate Source Threshold Voltage Max4.5V
Power Dissipation830W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFH42N60P3 is a Polar3™ HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
- International standard package
- Low RDS (ON) and QG
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.185ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
42A
Drain Source On State Resistance
0.185ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
830W
Power Dissipation
830W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
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