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IXFH80N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 80 A, 0.038 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH80N65X2
Newark Part No.02AC9803
Product RangeHiPerFET
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $15.080 |
| 10+ | $14.360 |
| 25+ | $12.000 |
| 60+ | $10.530 |
| 120+ | $10.140 |
| 270+ | $9.730 |
Price for:Each
Minimum: 1
Multiple: 1
$15.08
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH80N65X2
Newark Part No.02AC9803
Product RangeHiPerFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id80A
On Resistance Rds(on)0.038ohm
Drain Source On State Resistance0.038ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd890W
Gate Source Threshold Voltage Max5V
Power Dissipation890W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHiPerFET
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (17-Jan-2023)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.038ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
HiPerFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.038ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
890W
Power Dissipation
890W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate