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KP-2012SF4C
Infrared Emitter, 880 nm, 120 °, 0805, 1.5 mW/Sr
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1,034 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.650 |
| 10+ | $0.520 |
| 100+ | $0.351 |
| 500+ | $0.305 |
| 1000+ | $0.265 |
| 4000+ | $0.216 |
| 10000+ | $0.208 |
Price for:Each
Minimum: 5
Multiple: 5
$3.25
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Product Information
ManufacturerKINGBRIGHT
Manufacturer Part NoKP-2012SF4C
Newark Part No.66W1931
Technical Datasheet
Peak Wavelength880nm
Angle of Half Intensity120°
Diode Case Style0805
Radiant Intensity (Ie)1.5mW/Sr
Rise Time-
Fall Time tf-
Forward Current If(AV)20mA
Forward Voltage VF Max1.6V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSLMSL 6 - Time on Label
SVHCNo SVHC (23-Jan-2024)
Product Overview
The KP-2012SF4C is an Infrared Emitting Diode with water clear lens made with gallium aluminium arsenide. It is mechanically and spectrally matched to the phototransistor.
Technical Specifications
Peak Wavelength
880nm
Diode Case Style
0805
Rise Time
-
Forward Current If(AV)
20mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
MSL 6 - Time on Label
Angle of Half Intensity
120°
Radiant Intensity (Ie)
1.5mW/Sr
Fall Time tf
-
Forward Voltage VF Max
1.6V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate