Print Page
IXFN150N65X2
Bipolar (BJT) Single Transistor, N Channel, 145 A, 650 V, 0.017 ohm, 10 V, 5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN150N65X2
Newark Part No.03AH0720
Product RangeHiPerFET X2 Series
Technical Datasheet
2 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $51.340 |
| 5+ | $46.860 |
| 10+ | $42.380 |
| 25+ | $41.720 |
| 50+ | $41.050 |
| 100+ | $40.390 |
Price for:Each
Minimum: 1
Multiple: 1
$51.34
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN150N65X2
Newark Part No.03AH0720
Product RangeHiPerFET X2 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id145A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.017ohm
Drain Source On State Resistance0.017ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
Power Dissipation Pd1.04kW
Operating Temperature Max150°C
Product RangeHiPerFET X2 Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
145A
On Resistance Rds(on)
0.017ohm
Rds(on) Test Voltage
10V
Power Dissipation
1.04kW
Operating Temperature Max
150°C
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.017ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
1.04kW
Product Range
HiPerFET X2 Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability