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IXFN210N30X3
Bipolar (BJT) Single Transistor, N Channel, 210 A, 300 V, 0.0038 ohm, 10 V, 4.5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N30X3
Newark Part No.03AH0731
Product RangeX3-Class HiPerFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $32.420 |
| 5+ | $32.420 |
| 10+ | $32.420 |
| 25+ | $32.420 |
| 50+ | $32.420 |
| 100+ | $32.420 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N30X3
Newark Part No.03AH0731
Product RangeX3-Class HiPerFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id210A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.0038ohm
On Resistance Rds(on)0.0038ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd695W
Power Dissipation695W
Operating Temperature Max150°C
Product RangeX3-Class HiPerFET Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast X3-Class HiPerFET™ power MOSFET. It Is suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics and servo controls applications.
- miniBLOC with aluminium nitride isolation
- Isolation voltage 2500V
- High current handling capability
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
210A
Drain Source On State Resistance
0.0038ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
695W
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.0038ohm
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
695W
Product Range
X3-Class HiPerFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability