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IXTA3N150HV
Power MOSFET, N Channel, 1.5 kV, 3 A, 7.3 ohm, TO-263, Surface Mount
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300 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $6.400 |
| 5+ | $6.400 |
| 10+ | $6.400 |
| 25+ | $6.400 |
| 100+ | $6.400 |
| 500+ | $6.400 |
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Multiple: 1
$6.40
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA3N150HV
Newark Part No.03AH1356
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id3A
Drain Source On State Resistance7.3ohm
On Resistance Rds(on)7.3ohm
Transistor Case StyleTO-263
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation250W
Power Dissipation Pd250W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode suitable for use in high voltage power supplies, capacitor discharge applications and pulse circuits applications.
- High voltage power MOSFET
- Moulding epoxies meet UL94V-0 flammability classification
- High blocking voltage
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
7.3ohm
Transistor Case Style
TO-263
Rds(on) Test Voltage
10V
Power Dissipation
250W
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
7.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
250W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability