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IXTT02N450HV
Power MOSFET, N Channel, 4.5 kV, 200 mA, 750 ohm, TO-268HV, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $20.700 |
| 5+ | $20.700 |
| 10+ | $20.700 |
| 25+ | $20.700 |
| 100+ | $20.700 |
| 500+ | $20.700 |
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$20.70
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTT02N450HV
Newark Part No.03AH1800
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds4.5kV
Continuous Drain Current Id200mA
Drain Source On State Resistance750ohm
On Resistance Rds(on)750ohm
Transistor Case StyleTO-268HV
Transistor MountingSurface Mount
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation Pd113W
Power Dissipation113W
No. of Pins3Pins
Operating Temperature Max-
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuits, laser and X-Ray generation systems applications.
- High blocking voltage
- High voltage packages
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
4.5kV
Drain Source On State Resistance
750ohm
Transistor Case Style
TO-268HV
Rds(on) Test Voltage
-
Power Dissipation Pd
113W
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
750ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
Power Dissipation
113W
Operating Temperature Max
-
Qualification
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability