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TN0110N3-G
MOSFET, 100V, 0.35A, 150DEG C, 1W
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135 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.360 |
| 10+ | $1.250 |
| 25+ | $1.130 |
| 50+ | $1.080 |
| 100+ | $1.020 |
Price for:Each
Minimum: 1
Multiple: 1
$1.36
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoTN0110N3-G
Newark Part No.72AC6723
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id350mA
On Resistance Rds(on)1.6ohm
Drain Source On State Resistance1.6ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Power Dissipation Pd1W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
1.6ohm
Transistor Case Style
TO-92
Power Dissipation Pd
1W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
350mA
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability