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MT53E1G32D2FW-046 AUT:C
DRAM, Mobile LPDDR4, 32 Gbit, 1G x 32bit, 2.133 GHz, FBGA
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT53E1G32D2FW-046 AUT:C
Newark Part No.67AK2488
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $64.530 |
Price for:Each
Minimum: 1
Multiple: 1
$64.53
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E1G32D2FW-046 AUT:C
Newark Part No.67AK2488
Technical Datasheet
DRAM TypeMobile LPDDR4
DRAM Density32Gbit
Memory Density32Gbit
DRAM Memory Configuration1G x 32bit
Memory Configuration1G x 32bit
Clock Frequency Max2.133GHz
Clock Frequency2.133GHz
Memory Case StyleFBGA
IC Case / PackageFBGA
No. of Pins-
Supply Voltage Nom1.1V
IC MountingSurface Mount
Access Time468ps
Operating Temperature Min-40°C
Operating Temperature Max125°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT53E1G32D2FW-046 AUT:C is a 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- Frequency range from 2133 to 10MHz (data rate range per pin: 4266-20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
- Programmable and on-the-fly burst lengths (BL =16, 32), up to 8.5GB/s per die x16 channel
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Clock-stop capability, programmable VSS (ODT) termination, single-ended CK and DQS support
- 4GB (32Gb) total density, 4266Mb/s data rate per pin, AEC-Q100 automotive qualified
- 200-ball TFBGA package, -40°C to +125°C operating temperature
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Density
32Gbit
Memory Configuration
1G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
FBGA
Supply Voltage Nom
1.1V
Access Time
468ps
Operating Temperature Max
125°C
SVHC
No SVHC (17-Jan-2023)
DRAM Density
32Gbit
DRAM Memory Configuration
1G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
FBGA
No. of Pins
-
IC Mounting
Surface Mount
Operating Temperature Min
-40°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate