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MT53E1G32D2FW-046 IT:B
DRAM, LPDDR4, 32 Gbit, 1G x 32bit, 2.133GHz, TFBGA, 200 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT53E1G32D2FW-046 IT:B
Newark Part No.25AK7956
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $64.290 |
| 5+ | $61.820 |
| 10+ | $59.350 |
| 25+ | $57.420 |
| 50+ | $55.980 |
| 100+ | $54.560 |
Price for:Each
Minimum: 1
Multiple: 1
$64.29
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E1G32D2FW-046 IT:B
Newark Part No.25AK7956
Technical Datasheet
DRAM TypeMobile LPDDR4
DRAM Density32Gbit
Memory Density32Gbit
DRAM Memory Configuration1G x 32bit
Memory Configuration1G x 32bit
Clock Frequency Max2.133GHz
Clock Frequency2.133GHz
Memory Case StyleTFBGA
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Access Time468ps
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
Product Overview
MT53E1G32D2 is a 32Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
- 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
- 1 Gig x 32 configuration, LPDDR4, 2 die addressing
- 200-ball TFBGA (Ø0.40 SMD) package, 468ps cycle time
- Operating temperature rating range from -40°C to +95°C
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Density
32Gbit
Memory Configuration
1G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
Access Time
468ps
Operating Temperature Max
95°C
MSL
MSL 3 - 168 hours
DRAM Density
32Gbit
DRAM Memory Configuration
1G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
TFBGA
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate