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MT53E2G32D4DE-046 WT:A
DRAM, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2.133 GHz, TFBGA, 200 Pins
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| Quantity | Price |
|---|---|
| 1+ | $16.760 |
| 5+ | $16.760 |
| 10+ | $16.760 |
| 25+ | $16.760 |
| 50+ | $16.760 |
| 100+ | $16.760 |
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Multiple: 1
$16.76
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E2G32D4DE-046 WT:A
Newark Part No.80AH8344
DRAM TypeMobile LPDDR4
Memory Density64Gbit
DRAM Density64Gbit
DRAM Memory Configuration2G x 32bit
Memory Configuration2G x 32bit
Clock Frequency2.133GHz
Clock Frequency Max2.133GHz
IC Case / PackageTFBGA
Memory Case StyleTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Access Time-
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
Product Overview
MT53E2G32D4DE-046 WT:A is a mobile LPDDR4 SDRAM. The 16Gb low-power DDR4 SDRAM (LPDDR4) or low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This 8-bank device is internally configured with ×16 I/O. Each of the ×16 2,147,483,648-bit banks are organized as 131,072 rows by 1024 columns by 16 bits.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL =16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
- 2 Gig × 32 (2 channels ×16 I/O) array configuration, 468ps at RL=36/40 speed grade, cycle time
- 200-ball TFBGA package
- Operating temperature range from -25°C to +85°C
Technical Specifications
DRAM Type
Mobile LPDDR4
DRAM Density
64Gbit
Memory Configuration
2G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
TFBGA
Supply Voltage Nom
1.1V
Access Time
-
Operating Temperature Max
85°C
SVHC
No SVHC (17-Jan-2023)
Memory Density
64Gbit
DRAM Memory Configuration
2G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
TFBGA
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Min
-25°C
Product Range
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate