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VRF152
RF FET Transistor, 130 V, 20 A, 300 W, M174
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Product Information
ManufacturerMICROSEMI
Manufacturer Part NoVRF152
Newark Part No.79R4883
Technical Datasheet
Drain Source Voltage Vds130V
Continuous Drain Current Id20A
Power Dissipation300W
Power Dissipation Pd300W
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleM174
RF Transistor CaseM174
No. of Pins4Pins
Operating Temperature Max-
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
Product Overview
The VRF152 is a N-channel gold-metalized Silicon RF Power Transistor designed for broadband applications requiring high power and gain without compromising reliability, ruggedness or inter-modulation distortion.
- Improved Ruggedness
- Excellent stability and low IMD
- Common source configuration
- Nitride passivated
- Refractory gold metallization
- 30:1 Load VSWR capability at specified operating conditions
- 150W with 22dB Typical gain at 30MHz, 50V
- 150W with 14dB Typical gain at 175MHz, 50V
Applications
Industrial, Commercial, Defence, Military & Aerospace, Power Management
Technical Specifications
Drain Source Voltage Vds
130V
Power Dissipation
300W
Operating Frequency Min
-
Transistor Case Style
M174
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (07-Jul-2017)
Continuous Drain Current Id
20A
Power Dissipation Pd
300W
Operating Frequency Max
-
RF Transistor Case
M174
Operating Temperature Max
-
Transistor Mounting
Flange
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Jul-2017)
Download Product Compliance Certificate
Product Compliance Certificate