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CM300DU-12H
IGBT Module, Dual [Half Bridge], 300 A, 600 V, 890 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DU-12H
Newark Part No.48F4211
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DU-12H
Newark Part No.48F4211
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
Continuous Collector Current300A
DC Collector Current300A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage600V
Power Dissipation Pd890W
Power Dissipation890W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
300A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
IGBT Termination
Tab
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
DC Collector Current
300A
Collector Emitter Saturation Voltage
600V
Power Dissipation
890W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate