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CM300DU-12H
IGBT Module, Dual [Half Bridge], 300 A, 600 V, 890 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DU-12H
Newark Part No.48F4211
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DU-12H
Newark Part No.48F4211
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current300A
Continuous Collector Current300A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage600V
Power Dissipation Pd890W
Power Dissipation890W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
300A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation Pd
890W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
300A
Collector Emitter Saturation Voltage
600V
Power Dissipation
890W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate