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Quantity | Price |
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1+ | $0.344 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$1.72
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002BKV,115
Newark Part No.28T0306
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id340mA
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-666
No. of Pins6Pins
Power Dissipation N Channel525mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The 2N7002BKV is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
340mA
Drain Source Voltage Vds
60V
Continuous Drain Current Id N Channel
340mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SOT-666
Power Dissipation N Channel
525mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability