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BSH108,215
MOSFET, N-CH, 30V, 1.9A, 0.83W, SOT-23
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH108,215
Newark Part No.34R3008
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.9A
Drain Source On State Resistance0.12ohm
On Resistance Rds(on)0.077ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd830mW
Gate Source Threshold Voltage Max1.5V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for BSH108,215
2 Products Found
Product Overview
The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications.
- Very fast switching
- Logic level compatible
- Subminiature surface-mount package
- -65 to 150°C Operating junction temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.12ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
1.9A
On Resistance Rds(on)
0.077ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
830mW
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability