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BSS138P,215
Power MOSFET, N Channel, 60 V, 360 mA, 0.9 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.152 |
| 10+ | $0.105 |
| 25+ | $0.093 |
| 50+ | $0.080 |
| 100+ | $0.068 |
| 250+ | $0.067 |
| 500+ | $0.065 |
| 1000+ | $0.064 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$0.76
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138P,215
Newark Part No.27T2631
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id360mA
On Resistance Rds(on)0.9ohm
Drain Source On State Resistance1.6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd420mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation420mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS138P is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Very Fast Switching
- ESD Protection Upto 1.5kV
- Logic Level Compatible
- AEC-Q101 Qualified
Applications
Audio, Signal Processing, Power Management, Communications & Networking, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
360mA
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
420mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.9ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
420mW
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability