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BSS84,215
Power MOSFET, P Channel, 50 V, 130 mA, 6 ohm, TO-236AB, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS84,215
Newark Part No.11N8504
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id130mA
On Resistance Rds(on)6ohm
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd250mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
BSS84,215 is a P-channel vertical D-MOS logic level FET in a plastic package using vertical D-MOS technology. It is used in line current interrupter in telephone sets and relay, high-speed and line transformer drivers.
- Low threshold voltage
- High-speed switching
- Direct interface to CMOS and TTL
- No secondary breakdown
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
50V
On Resistance Rds(on)
6ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
250mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
130mA
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate